TransphormHighest Performance, Highest Reliability GaN

Sampling now!

Introducing the first
SuperGaN™ Gen V FET

  • World’s lowest packaged on-resistance
  • Delivers 25% lower power loss over SiC
  • Designed for Electric Vehicle power
    applications and more

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High Voltage GaN Devices You Can Trust

Industry-Leading GaN Reliability

• Field Reliability Rate: < 1 FIT
• Early Life Failure Rate: < 1 FIT
• Field Operation Hours: > 10B

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Highest Quality, Highest Reliability GaN

Now Trading on the Market

• Symbol: TGAN

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Increased Performance, Same Trusted Reliability

Introducing SuperGaN™ Power FETs

• Gen IV GaN platform
• +/- 20 V gate robustness*
• 4 V threshold*

*35 mΩ FET ratings; 240 mΩ FET also available

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New Evaluation Board

4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access

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TDTTP4000W065AN Evaluation Board

GaN Using Analog Control
for Bridgeless Totem-pole PFC

• Suitable for Standard CCM Boost topology
• > 99% efficient SuperGaN™ 650 V FETs
• Simpler power system design

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Aviation’s First Passively Cooled
(Fanless) 420 W Power Supply

AES’ PS250X PSU

• 10% more efficient than competition
• 3 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP

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HZZH’s Flagship 3 kW ZHR483KS

Telecom’s Ultra-Efficient
GaN Power Module

• 98% efficiency
• 42 V to 58 V power output
• Swappable with standardly configured modules

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IN PRODUCTION TICKER

Transphorm Wire

<<>>
NewsJan 6 2021Startup Funding: December 2020Press ReleaseJan 5 2021Transphorm to Present at the Needham Growth Conference on January 14NewsJan 4 2021AC-DC Power Conversion on a GaN Device Evaluation Board
Press ReleaseDec 24 2020Transphorm Announces Closing of $15 Million Private Placement of Common StockNewsDec 23 2020Top 10 News of 2020NewsDec 22 2020What’s next for Power Electronics 2021 – Wide Bandgap Semiconductors
Press ReleaseDec 22 2020Transphorm Announces Pricing of $15 Million Private Placement of Common StockPress ReleaseDec 14 2020Transphorm Announces $4 Million Multi-Year Development Agreement with Yaskawa ElectricNewsDec 4 20205th gen SuperGaN device targets electric vehicles
EventDec 3 2020Webinar: Where’s the Fit for GaN and SiC?EventDec 3 2020Wide Bandgap Conference 2020Press ReleaseDec 3 2020Transphorm to Present at the 2020 Benzinga Global Small Cap Conference on December 8th at 1:00 pm ET
NewsDec 3 202010kW from discrete GaN deviceNewsDec 3 2020Transphorm Samples First SuperGaN Gen V FETPress ReleaseDec 2 2020Transphorm的SuperGaN Gen V FET提供世界上最低的封装导通电阻，瞄准电动汽车应用
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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.