TransphormHighest Performance, Highest Reliability GaN

SuperGaN® Design Innovation

Qualcomm Quick Charge 5
Compliant Adapter.

• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies

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Head-to-head comparison

Datasheets don’t tell
the whole story.

• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses

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Sampling Soon from Fujitsu General Electronics

Industry’s First Small GaN Modules

2 Module Options: 4 GaN FETs or 6 GaN FETs

• Transphorm’s 650 V GaN FETs + integrated drive circuit
• Full-bridge configuration
• FGEL design and mounting modularization technology

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New Design Resource Now Available

65W USB-C PD GaN Adapter
Reference Design.

  • Active clamp flyback PWM controller
    with SuperGaN® FET
  • 30W/in3 Power Density
  • 94.5% Efficiency

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Teardown: Helpers Lab 65 W GaN Charger

Transphorm’s 240 mΩ FET
Outperforms e-mode GaN devices.

TP65H300G4LSG delivers 65 W performance with:

  • Greater efficiency
  • Higher power density

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No Two Wide Bandgap
Technologies Are The Same.

  • Greater Efficiency
  • Higher Power Operation
  • Lower Switching Losses
  • Lower Temperature Operation

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Six Server Power Supplies, One GaN Platform

Bel Power’s Titanium
TET Series Family
for Data Centers

• 1.5 – 3.2 kW product options
• > 96% efficiency (≥ 99% PFC efficiency)
• 31.7 – up to 62 W/in3 power density

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High Voltage GaN Devices You Can Trust

Industry-Leading GaN Reliability

• Field Reliability Rate: < 1 FIT
• Early Life Failure Rate: < 1 FIT
• Field Operation Hours: > 10B

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New Evaluation Board

4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access

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TDTTP4000W065AN Evaluation Board

GaN Using Analog Control
for Bridgeless Totem-pole PFC

• Suitable for Standard CCM Boost topology
• > 99% efficient SuperGaN™ 650 V FETs
• Simpler power system design

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IN PRODUCTION TICKER

Transphorm Wire

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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.