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New Design Resources
1200 V GaN FET Device
Model & Datasheet
- Verilog-A simulation model
- Proven 98.7% efficiency
- Supports next generation
3-phase and EV power sysetms
Product Portfolio Additions
Six New Devices in
Industry Standard Packages
- Pin-to-pin compatible with e-mode GaN devices
- Proven higher performance and reliability
- SuperGaN d-mode two-switch normally-off platform
Third Evaluation Board with Microchip Support
3 kW Inverter Board With
Microchip Digital
Signal Controller
- ~99% power efficiency
- Non-isolated full bridge topology
- Microchip dev tools, global support access
New Integrated GaN Device
Weltrend SuperGaN SiP
- Multi-mode flyback PWM controller +
240 mΩ SuperGaN® FET - Power density of 26 W/in3
- Supports 45 to 100 W USB-C
power adapters
ChargerLAB Teardown
HP 65W GaN USB-C
Laptop Charger
- TP65H300G4LSG SuperGaN® FET
- Dual USB-C PD PPS fast charger
- Labeled “Powerfully Petite” and
“Tiny but Mighty”
New Design Resource
240W Power Adapter
Reference Design
- 650V 150mΩ SuperGaN FET
- 96% peak power efficiency
- 30 W/in3 power density
- CCM Boost PFC + Half Bridge LLC topology
Supply Contract Awarded
Novel Four-Quadrant GaN Switch
- Bidirectional current flow
- Bidirectional voltage control
- 650V device in 4-pin TO-247 package
SuperGaN® Reference Design Portfolio
Kick-Start USB-C PD
Power Adapter Development
- 45W to 140W adapters
- Open frame design tools
- ≥ 93.5% power efficiency
New Higher Power Surface Mount Device
SuperGaN® FET in a D2PAK
- 50 mOhm typical on-resistance
- ±20 Vmax gate robustness, 4V threshold
- For data center, broad industrial systems
GaN Technology Preview
99% Efficiency with
New 1200V FET
- Rivals SiC solutions
- Optimized for Electric Vehicle
and Renewable systems - To be introduced at ISPSD 2022
SuperGaN® Design Innovation
Qualcomm Quick Charge 5
Compliant Adapter.
• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies
Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
New Evaluation Board
4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access
IN PRODUCTION TICKER
Transphorm Wire
Press ReleaseJun 1 2023Transphorm to Participate in GaN Panel at Stifel 2023 Cross Sector Insight ConferencePress ReleaseMay 23 2023Transphorm Wins $15 Million Contract from the National Security Technology AcceleratorPress ReleaseMay 15 2023Transphorm Announces Appointment of Company Co-founders as Chief Executive Officer and Board Chair
Press ReleaseMay 8 2023Simulation Model of Industry’s First 1200 V GaN-on-Sapphire Device Released by TransphormPress ReleaseApr 27 2023Transphorm Introduces Six SuperGaN FETs Pin-to-Pin Compatible With e-mode DevicesPress ReleaseApr 19 2023Transphorm at PCIM 2023: Superior GaN Solutions Powering Electric Vehicle Systems to Adapters
EventApr 11 2023PCIM 2023EventApr 11 2023PowerUP Virtual Conference & ExhibitionEventApr 11 2023PE INTERNATIONAL 2023