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Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
Sampling Soon from Fujitsu General Electronics
Industry’s First Small GaN Modules
2 Module Options: 4 GaN FETs or 6 GaN FETs
• Transphorm’s 650 V GaN FETs + integrated drive circuit
• Full-bridge configuration
• FGEL design and mounting modularization technology
New Design Resource Now Available
65W USB-C PD GaN Adapter
Reference Design.
- Active clamp flyback PWM controller
with SuperGaN® FET - 30W/in3 Power Density
- 94.5% Efficiency
Teardown: Helpers Lab 65 W GaN Charger
Transphorm’s 240 mΩ FET
Outperforms e-mode GaN devices.
TP65H300G4LSG delivers 65 W performance with:
- Greater efficiency
- Higher power density
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
Early Life Failure Testing
What you don’t know about ELF
can harm your business.
It’s the metric most often missing in GaN reliability reports.
Don’t risk your reputation on incomplete data.
Know what to ask for. Know what it means.
Six Server Power Supplies, One GaN Platform
Bel Power’s Titanium
TET Series Family
for Data Centers
• 1.5 – 3.2 kW product options
• > 96% efficiency (≥ 99% PFC efficiency)
• 31.7 – up to 62 W/in3 power density
Sampling now!
Introducing the first
SuperGaN™ Gen V FET
- World’s lowest packaged on-resistance
- Delivers 25% lower power loss over SiC
- Designed for Electric Vehicle power
applications and more
High Voltage GaN Devices You Can Trust
Industry-Leading GaN Reliability
• Field Reliability Rate: < 1 FIT
• Early Life Failure Rate: < 1 FIT
• Field Operation Hours: > 10B
New Evaluation Board
4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access
TDTTP4000W065AN Evaluation Board
GaN Using Analog Control
for Bridgeless Totem-pole PFC
• Suitable for Standard CCM Boost topology
• > 99% efficient SuperGaN™ 650 V FETs
• Simpler power system design
IN PRODUCTION TICKER
Transphorm Wire
Press ReleaseAug 2 2021Transphorm Announces the Close of JV Transaction for Acquisition of AFSW Wafer-FabPress ReleaseJun 30 2021Transphorm Appoints Ms. Kelly Smales to Board of DirectorsPress ReleaseJun 24 2021Transphorm Announces Fiscal Fourth Quarter 2021 Financial Results
Press ReleaseJun 15 2021Fujitsu General Electronics Develops Industry-first* Small GaN ModuleNewsJun 3 2021Transphorm and Silana Partner on GaN Adapter Reference DesignNewsMay 27 2021Top five power products in May
NewsMay 27 2021GaN power adapter reference design delivers high power densityPress ReleaseMay 26 2021Transphorm to Participate at Upcoming Investor ConferencesNewsMay 23 2021Silanna Semiconductor and Transphorm Develop GaN Adapter Reference Design