TransphormHighest Performance, Highest Reliability GaN

New High Efficiency Compute PSU

Boco Electronics’
3.6 kW Power Supply

  • Uses SuperGaN® Gen IV FETs
  • Achieves 96% power efficiency
  • Designed for demanding applications,
    rugged environments

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GaN Technology Preview

99% Efficiency with
New 1200V FET

  • Rivals SiC solutions
  • Optimized for Electric Vehicle
    and Renewable systems
  • To be introduced at ISPSD 2022

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TDK-Lambda Expands PF500F Series

99% GaN Increases
Modules’ Power Density

  • 72 mΩ PQFN device
  • 38% power density increase
  • 6% power efficiency increase

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GaN Market Leadership Continues

Over 1 Million
GaN FETs Shipped

  • Powering adapters and fast chargers
  • Manufacturing in high volumes
  • Driven by SuperGaN® advantages

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Introducing the TP65H035G4WSQA FET

SuperGaN®Gen IV Device
Now Automotive Qualified

• 650 V 35 mΩ FET
• Qualified up to 175°C
• Thermally superior TO-247 package

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SuperGaN® Design Innovation

Qualcomm Quick Charge 5
Compliant Adapter.

• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies

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Second Evaluation Board with Microchip Support

2.5 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

  • Swappable daughter card for 50 mΩ
    or 72 mΩ FET evaluation
  • Pre-programmed firmware
  • Microchip dev tools, global support access

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New Evaluation Board & Development Kit

130W ACF SuperGaN®
USB-C PD Adapter

• SuperGaN® FETs with Diodes Inc. ACF Controllers
• PPS fast charging supported
• High power peak efficiency: > 93.5%
• Full load efficiency: 91.4% @ 90 Vac

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Head-to-head comparison

Datasheets don’t tell
the whole story.

• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses

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No Two Wide Bandgap
Technologies Are The Same.

  • Greater Efficiency
  • Higher Power Operation
  • Lower Switching Losses
  • Lower Temperature Operation

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Six Server Power Supplies, One GaN Platform

Bel Power’s Titanium
TET Series Family
for Data Centers

• 1.5 – 3.2 kW product options
• > 96% efficiency (≥ 99% PFC efficiency)
• 31.7 – up to 62 W/in3 power density

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New Evaluation Board

4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access

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Transphorm Wire

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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.