TransphormHighest Performance, Highest Reliability GaN

Design Resources

Power Adapter (Open Frame) Reference Designs

Part Number Topology Output(s) Power (W) Frequency (kHz) Power Density (W/in3) GaN FET(s)
TDADP-SIL-USBC-65W-RD ACF USB-C PD 65 Up to 140 30 TP65H300G4LSG
TDADP-TPH-ON-USBC-65W-RD QRF USB-C PD 65 Up to 300 30 TP65H300G4LSG

Partner Power Adapter Designs using Transphorm GaN

Part Number Partner Topology Output(s) Power (W) Frequency (kHz) Power Density (W/in3) GaN FET(s)
ACF+GaN PD 3.0 Diodes Inc PFC + ACF USB-C PD/PPS 140 110 + 140 Up to 20 TP65H150G4LSG
ACF+GaN EVB2 Diodes Inc ACF USB-C PD/PPS 65 140 29 TP65H150G4LSG
ACF+GaN EVB1 Diodes Inc PFC + ACF USB-C PD/PPS 130 110 + 140 Up to 20 TP65H150G4LSG
RD-29 Silanna ACF USB-C PD 65 146 29.8 TP65H300G4LSG
SZ-RD29-00 Silanna ACF USB-C PD 65 146 30 TP65H300G4LSG

Design Files for Evaluation Kits that have been Discontinued

Topology Conversion Part Number Power (W) Frequency (kHz) GaN FET(s) Design Files
Firmware files:
Firmware files:
Firmware files:

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

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