TransphormHighest Performance, Highest Reliability GaN

Higher efficiency.
Higher power density.
Lower system cost.
New system design opportunities.
This is the GaN Revolution.

Backed by customer commentary and published metrics, Transphorm’s high-voltage GaN FETs move power electronics beyond Silicon’s limitations.


An Independent View

The Verge Science Team takes an in-depth look at GaN, exploring the wide bandgap semiconductor material’s ability to increase power efficiency and, ultimately, displace Silicon as the next go-to power conversion solution.

Customer Innovations

Transphorm’s customer base includes product manufacturers unsatisfied with the status quo. Companies on the bleeding edge of innovation that strive to break their own power system performance records, raising the bar industry-wide. Gallium nitride power transistors are proving to be their disruptive technology of choice.

Spotlight: Customer Products in Production

Inergy’s Kodiak Extreme utilizes a photovoltaic (PV) inverter and battery charger both integrating Transphorm’s JEDEC-qualified GaN platform. These power systems result in a generator that is more powerful, lighter, and quicker to charge than competitive products.

TDK-Lambda’s redesigned standard power module uses a bridgeless totem-pole power factor correction topology to optimize Transphorm’s TPH3206LDG FET in an 8×8 PQFN package.

Wentai’s flagship 80 PLUS® Titanium ATX power supply targets AI, crypto mining, Esports, gaming, and more. It uses Transphorm’s Gen III GaN FETs in an interleaved CCM boost PFC to achieve market-leading performance and design metrics ranging from form factor size to power density.

Bel Power Corsair Delta
Telcodium Yaskawa

Disruptive Reliability and Performance

High quality, high reliability GaN in standard TO-XXX packages.

Transphorm’s GaN FETs switch up to 4x faster than Silicon solutions. Further, unlike Si MOSFETs, the GaN transistors are inherently bi-directional and optimized in a bridgeless totem-pole power factor correction design.


Transphorm commits to producing the market’s highest quality, highest reliability high-voltage GaN devices.

Our third generation platform demonstrates that commitment. Gen III 650 V FETs offer the highest threshold voltage (4 V) and gate robustness (±20 V) available today.

For more information, the Reliability Lifecycle of GaN Power Devices paper includes published data on our JEDEC and AEC-Q101 qualified technology.

Cross-industry Applications

High-voltage GaN technology benefits numerous markets that require reliable higher efficiency, higher performance power conversion. The highest adoption rates are projected for the following application areas:

Power Supplies

Increases clean power output in standardized server and telecom form factors.


Allows for significantly smaller, lighter PV inverter and residential applications.

Motor Drives, Servos and
PV Inverters

Enables reduction of total solution complexity while improving precision.

EV and Charging

Generates longer distance per charge with a lower overall system cost.

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