When designing Gen IV, Transphorm’s engineering team drew on learnings from production ramps of previous products, coupled with a constant drive for performance, manufacturability, and cost reduction to design a new product with ultimate simplicity and substantial improvements. The new platform’s patented technology delivers benefits that augment Transphorm’s intrinsic GaN performance and simplicity both in assembly and applications, which is the catalyst for the SuperGaN™ brand.
Driven by its patented technology, SuperGaN Gen IV benefits include:
Industry Leading Gan Reliability
Failures per Billion Hours (FIT)
Parts per Million per Year (PPM)
Quality + Reliability Webinar
High voltage GaN transistors increase power density while reducing system size and cost. However, GaN FET validation differs from that of Silicon FETs.
Listen to Transphorm’s Q+R expert as he explains how GaN devices should be validated; the target baseline results for infant mortality, FIT rates, etc.; and how these metrics impact end systems.
Our Q+R is in large part enabled by our design choice. Today, cascode is the only configuration proven to enable GaN in real-world applications. Transphorm’s GaN is backed by extensive lifetime, quality and reliability data—unavailable with other configurations today, such as pGaN e-mode.
|Attribute||Cascode (Transphorm)*||e-mode (market)*|
|Quality, reliability, lifetime performance||Extended JEDEC, AEC-Q101, lifetime testing||Limited data|
|Device breakdown voltage (TJ = 150°C)||650 V (qualified), 1200 V (measured)||500 V and 600 V (measured|
|Maximum transient protection||800 V||750 V|
|Gate drive safety margin (RON @ VGS)||10 V||1 V|
|Gate drive noise immunity||4.0 V (typical)||1.7 V (typical)|
|Negative gate drive required||No||Yes|
|Slew rate control||Yes||Yes|
|Reverse conduction operation (VSD)||2.2 V to 2.6 V||6 V to 9 V (defined by gate drive)|
|Saturation current limit (TJ = 150°C)||> 3x higher than e-mode||Reduced channel and gate charge|
|Paralleling||Up to two TO-XXX devices||More than two devices possible|
|FOM (RON * QOSS)||Industry standard||Minimal increase with reduced Q+R|
|Die size||Industry standard||Smaller with reduced Q+R|
|Thermal performance (72 mΩ)||50°C at 1500 W
83°C at 2526 W
|80°C at 1500 W|
*Unless specified, data is based on a 50 mΩ device.
High-voltage GaN technology benefits numerous markets that require reliable higher efficiency, higher performance power conversion. The highest adoption rates are projected for the following application areas:
Increases clean power output in standardized server and telecom form factors.
Improved efficiencies result in lower thermals, improved power density and lower system cost.
Reduces size and weight of systems that run industrial factories, charge battery powered forklifts, electric vehicles and keep critical data accessible..
Generates longer distance per charge with a lower overall system cost.
Enables hyper fast charging of 5G-enabled devices while also producing N-polar GaN Epi, starting material for high efficiency RF solutions up to 94 GHz.