The TP65H070G4LSG 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4LSG is offered in an industry-standard PQFN88 with a common source package configuration.
|RDS(on) (mΩ) max*||85|
|Qrr (nC) typ||0|
|Qg (nC) typ||8.4|
|*Reflects both static and dynamic on-resistance|
Output Power (W)
Output Power (W)
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0007: PQFN88 Lead-free 2nd Level Soldering Recommendations for Vapor Phase Reflow
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
AN0012: App Note AN0012 – 5x6mm and 8x8mm PQFN Tape and Reel Information
AN0014: Low Cost, High Density, High Voltage Silicon Driver
DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
DG006: 600W DC to DC LLC Design Using GaN FETs
DG009: 12V/1200W High Frequency LLC Converter Design using GaN FETs
DG0010: Design Analysis of DC-DC Module 50V/40A
Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN, including the TDHBG1200DC100-KIT 1.2kW half-bridge buck or boost featuring TPH65H070LDG/LSG.