TransphormHighest Performance, Highest Reliability GaN

TP65H050WSQA

650V 50mΩ AEC-Q101 Qualified GaN FET in TO-247

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The TP65H050WSQA 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

The device is also automotive qualified to 175°C, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H050WSQA is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

Key Specifications
VDS (V) min 650
V(TR)DSS (V) max 800
RDS(on)eff (mΩ) max* 60
QRR (nC) typ 125
QG (nC) typ 16
*Reflects both static and dynamic on-resistance

Key Features

  • AEC-Q101 qualified GaN technology
  • Junction temperature rating of 175C
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design

Output Power (W)

Output Power (W)

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