TransphormHighest Performance, Highest Reliability GaN

650V GaN FETs

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Part Number Vds (V)
min
Rds(on)eff
(mΩ) typ
Rds(on)eff
(mΩ) max
Id (25°C) (A)
max
Package Package
Variation
Datasheet Buy
Now
TP65H035WSQA 650 35 41 47 TO-247 Source Datasheet Buy Now
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TPH3205WSBQA 650 49 62 35 TO-247 Source Datasheet Buy Now
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TP65H035WS 650 35 41 46.5 TO-247 Source Datasheet Buy Now
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TP65H050WS 650 49 60 34 TO-247 Source Datasheet Buy Now
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TP65H070LDG 650 72 85 25 PQFN88 Drain Datasheet Buy Now
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TP65H070LSG 650 72 85 25 PQFN88 Source Datasheet Buy Now
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TPH3206PSB 650 150 180 16 TO-220 Source Datasheet Buy Now
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TPH3208PS 650 110 130 20 TO-220 Source Datasheet Buy Now
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TPH3212PS 650 72 85 26 TO-220 Source Datasheet Buy Now
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Part Number Vds (V)
min
Rds(on)eff
(mΩ) typ
Rds(on)eff
(mΩ) max
Id (25°C) (A)
max
Package Package
Variation
Datasheet Sample
Request
TP65H050BS* 650 50 60 34 TO-263 Source Datasheet Request
Regional Sales Representatives:     |     |     |     |     |  
TP65H150LSG** 650 150 180 15 PQFN88 Source Datasheet Request
Regional Sales Representatives:     |     |     |     |     |  
TP65H300G4LSG*** 650 240 290 8 PQFN Source Datasheet Request
Regional Sales Representatives:     |     |     |     |     |  

Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

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