Transphorm最高性能, 最可靠的GaN

Now In Production: TP90H050WS

900 Volt GaN FETs

• 1000 V transient rating
• 10 kW output in a half bridge topology
• 50 mOhm typical on-resistance

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Highest Quality, Highest Reliability GaN

Now Trading on the Market

• Symbol: TGAN

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PCIM Virtual Booth

Virtual Booth Exhibit

Hosted in HY-LINE’s Aktive & Passive Bauteile Room

  • SuperGaN™ FETs
  • 4 kW Totem-pole PFC Evaluation Board
    with Microchip's dsPIC® Digital Power PIM
  • Technical Videos

Visit Virtual Exhibit

Increased Performance, Same Trusted Reliability

Introducing SuperGaN™ Power FETs

• Gen IV GaN platform
• +/- 20 V gate robustness*
• 4 V threshold*

*35 mΩ FET ratings; 240 mΩ FET also available

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New Evaluation Board

4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access

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HZZH’s Flagship 3 kW ZHR483KS

Telecom’s Ultra-Efficient
GaN Power Module

• 98% efficiency
• 42 V to 58 V power output
• Swappable with standardly configured modules

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Aviation’s First Passively Cooled
(Fanless) 420 W Power Supply

AES’ PS250X PSU

• 10% more efficient than competition
• 3 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP

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Adapters

Transphorm:
The Only GaN FETs Qualified
to Power Tomorrow’s
Power Adapters

IN PRODUCTION TICKER

Transphorm Wire

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Press Release 4月 14 2020(English) Transphorm推出第四代GaN平台及SuperGaN™功率FETPress Release 3月 17 2020(English) 用于HZZH 98%高效功率模块的Transphorm GaNPress Release 3月 3 2020(English) Transphorm Inc. Raises $21 Million and Completes Reverse Merger
Press Release12月 17 2019(English) Transphorm的GaN被用於AES供應大型客機的最新電源Press Release11月 7 2019(English) Transphorm Ships Over Half a Million GaN Power Devices for Multi-kilowatt Class ApplicationsPress Release 9月 17 2019(English) Transphorm和贸泽电子宣布达成全球分销协议
Press Release 9月 11 2019(English) Transphorm的第三代產品線再新增兩種GaN FETPress Release 7月 30 2019(English) Transphorm Announces $18.5 Million Contract from Office of Naval Research to Establish Domestic Source of Gallium Nitride EpiwafersPress Release 6月 25 2019(English) Transphorm 利用第二款场效应晶体管加强900 V GaN产品阵容
Press Release 5月 28 2019(English) Transphorm第三代经JEDEC认证的GaN半导体将助力稳态光电全新的1.6 kW钛金级ATX PC游戏电源Press Release 2月 26 2019(English) Transphorm第三代氮化镓平台获得汽车认证Press Release 1月 31 2019(English) Transphorm发布最近公布的器件出货量背后的质量和可靠性数据
Press Release 1月 15 2019(English) TDK子公司TDK-Lambda利用Transphorm GaN发展PFH系列交流-直流电源Press Release12月 17 2018(English) Transphorm’s High Voltage GaN FETs Amp Up Marotta Controls’ Military Grade High Frequency Power SupplyPress Release12月 13 2018(English) Transphorm Ships Over a Quarter of a Million GaN Power Devices, Reaffirms High Volume Scalability
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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.