Transphorm最高性能, 最可靠的GaN

Increased Performance, Same Trusted Reliability

Introducing SuperGaN™ Power FETs

• Gen IV GaN platform
• +/- 20 V gate robustness*
• 4 V threshold*

*35 mΩ FET ratings; 240 mΩ FET also available

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New Evaluation Board

4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access

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HZZH’s Flagship 3 kW ZHR483KS

Telecom’s Ultra-Efficient
GaN Power Module

• 98% efficiency
• 42 V to 58 V power output
• Swappable with standardly configured modules

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Aviation’s First Passively Cooled
(Fanless) 420 W Power Supply


• 10% more efficient than competition
• 3 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP

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Introducing the Gen III

• Source and Drain tabs
• 72 mΩ on-resistance
• ± 20 V gate robustness
• 4 V threshold

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The Only GaN FETs Qualified
to Power Tomorrow’s
Power Adapters

The Defense Sector Drafts GaN

Marotta’s new conduction-cooled PSU replaces Silicon with GaN for:

• Conduction cooling, no fan required
• More than 2x the frequency
• Smaller system size
• Transphorm's quality and reliability

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Transphorm Wire


Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.