White Paper
Normally-Off D-Mode GaN
vs. E-Mode GaN
- Normally-off D-Mode GaN harnesses GaN’s natural benefits,
whereas e-mode makes performance compromises.
Superior GaN Solutions
Powering Adapters to Electric Vehicle Systems
We’re Leading
the EV GaN Revolution.
Visit us in Hall 2, Booth E2D31 to learn why.
New Solar Energy Application
World’s First Integrated
Microinverter PV Systems
Use Transphorm GaN
- SolarUnit models: 800 W, 920 W, 1500 W
- 150 mΩ + 70 mΩ Transphorm FETs
- Power Stages: DC-to-DC and DC-to-AC
- Peak efficiency: 97.3 % average
GaN Robustness Milestone
Transphorm FET
Demonstrates 5 μs SCWT
- 12 kW max power output
- 99.2% peak efficiency
- Meets servo motor, industrial motor,
and automotive powertrain requirement
Application Note
Low-Cost Driver Solution
- Pairs with SuperGaN FETs
- Delivers Up to 99% Efficiency
- Further Reduces Low- to
Mid-Power System Costs
New Design Resources
1200 V GaN FET Device
Model & Datasheet
- Verilog-A simulation model
- Proven 98.7% efficiency
- Supports next generation
3-phase and EV power sysetms
Product Portfolio Additions
Six New Devices in
Industry Standard Packages
- Pin-to-pin compatible with e-mode GaN devices
- Proven higher performance and reliability
- SuperGaN d-mode two-switch normally-off platform
Third Evaluation Board with Microchip Support
3 kW Inverter Board With
Microchip Digital
Signal Controller
- ~99% power efficiency
- Non-isolated full bridge topology
- Microchip dev tools, global support access
New Integrated GaN Device
Weltrend SuperGaN SiP
- Multi-mode flyback PWM controller +
240 mΩ SuperGaN® FET - Power density of 26 W/in3
- Supports 45 to 100 W USB-C
power adapters
ChargerLAB Teardown
HP 65W GaN USB-C
Laptop Charger
- TP65H300G4LSG SuperGaN® FET
- Dual USB-C PD PPS fast charger
- Labeled “Powerfully Petite” and
“Tiny but Mighty”
New Design Resource
240W Power Adapter
Reference Design
- 650V 150mΩ SuperGaN FET
- 96% peak power efficiency
- 30 W/in3 power density
- CCM Boost PFC + Half Bridge LLC topology
Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
IN PRODUCTION TICKER
Transphorm Wire
Press Release 9月 5 2023New Transphorm White Paper: Normally-Off D-Mode GaN Advantages Vs. Normally-Off E-Mode GaNPress Release 8月 28 2023Transphorm at electronica India 2023: High Voltage SuperGaN Solutions Boosting Electric Vehicle PerformancePress Release 8月 24 2023Transphorm’s GaN Powers World’s First Integrated Microinverter PV Systems by DAH Solar Co., Ltd
Event 8月 14 2023ISES Italy 2023Press Release 8月 9 2023Transphorm’s GaN First to Hit Short Circuit Robustness Milestone Key to Motor Drive ApplicationsEvent 7月 31 2023Bodo’s Wide Bandgap Event
Event 7月 31 2023Electronica IndiaEvent 7月 31 2023SEMICON Taiwan 2023Press Release 7月 6 2023Transphorm Confirms Gallium Nitride Materials Sources Are Secure
Press Release 6月 8 2023Transphorm Announces Low-Cost Driver Solution for SuperGaN FETsPress Release 6月 1 2023Transphorm to Participate in GaN Panel at Stifel 2023 Cross Sector Insight ConferencePress Release 5月 23 2023(English) Transphorm Wins $15 Million Contract from the National Security Technology Accelerator