Transphorm最高性能, 最可靠的GaN

White Paper

Normally-Off D-Mode GaN
vs. E-Mode GaN

  • Normally-off D-Mode GaN harnesses GaN’s natural benefits,
    whereas e-mode makes performance compromises.

Read the Paper

Superior GaN Solutions
Powering Adapters to Electric Vehicle Systems

We’re Leading
the EV GaN Revolution.

Visit us in Hall 2, Booth E2D31 to learn why.

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New Solar Energy Application

World’s First Integrated
Microinverter PV Systems
Use Transphorm GaN

  • SolarUnit models: 800 W, 920 W, 1500 W
  • 150 mΩ + 70 mΩ Transphorm FETs
  • Power Stages: DC-to-DC and DC-to-AC
  • Peak efficiency: 97.3 % average

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GaN Robustness Milestone

Transphorm FET
Demonstrates 5 μs SCWT

  • 12 kW max power output
  • 99.2% peak efficiency
  • Meets servo motor, industrial motor,
    and automotive powertrain requirement

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Application Note

Low-Cost Driver Solution

  • Pairs with SuperGaN FETs
  • Delivers Up to 99% Efficiency
  • Further Reduces Low- to
    Mid-Power System Costs

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New Design Resources

1200 V GaN FET Device
Model & Datasheet

  • Verilog-A simulation model
  • Proven 98.7% efficiency
  • Supports next generation
    3-phase and EV power sysetms

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Product Portfolio Additions

Six New Devices in
Industry Standard Packages

  • Pin-to-pin compatible with e-mode GaN devices
  • Proven higher performance and reliability
  • SuperGaN d-mode two-switch normally-off platform

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Third Evaluation Board with Microchip Support

3 kW Inverter Board With
Microchip Digital
Signal Controller

  • ~99% power efficiency 
  • Non-isolated full bridge topology 
  • Microchip dev tools, global support access 

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New Integrated GaN Device

Weltrend SuperGaN SiP

  • Multi-mode flyback PWM controller +
    240 mΩ SuperGaN® FET
  • Power density of 26 W/in3
  • Supports 45 to 100 W USB-C
    power adapters

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ChargerLAB Teardown

Laptop Charger

  • TP65H300G4LSG SuperGaN® FET
  • Dual USB-C PD PPS fast charger
  • Labeled “Powerfully Petite” and
    “Tiny but Mighty”

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New Design Resource

240W Power Adapter
Reference Design

  • 650V 150mΩ SuperGaN FET
  • 96% peak power efficiency
  • 30 W/in3 power density
  • CCM Boost PFC + Half Bridge LLC topology

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Head-to-head comparison

Datasheets don’t tell
the whole story.

• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses

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No Two Wide Bandgap
Technologies Are The Same.

  • Greater Efficiency
  • Higher Power Operation
  • Lower Switching Losses
  • Lower Temperature Operation

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Transphorm Wire


Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.