Transphorm最高性能, 最可靠的GaN

Design Resources

Transphorm delivers an easy-to-use platform to investigate the benefits of GaN with a number of evaluation kits in various topologies.

Topology Conversion Part Number Power (W) Frequency (kHz) GaN FET(s) 现在购买 Design Files
Half-bridge synchronous
buck or boost
DC-DC TDHB-65H070L-DC 1200 1200 TP65H070L Order Now
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Firmware files:
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Firmware files:
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Firmware files:
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Firmware files:
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Firmware files:
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser
Firmware files:
Best-in-class reliability Select your preferred supplier:Order from Digi-KeyOrder from Mouser

Product & Design Inquiries »

Barr, R., Haller, J., Shono, K., Georgieva, E., McKay, J., Smith, P., Smith, K., Rakesh, L., Yifeng, Y., High Voltage GaN Switch Reliability, Nov 2018

Parikh, Primit; Smith, Kurt; Barr, Ronald; et al., 650 Volt GaN Commercialization Reaches Automotive Standards, ECS Transactions, September 2017

Parikh, Primit, Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors [Expert View], IEEE Power Electronics Magazine, September, 2017

Huang, Zan; Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017

Zuk, Philip; Campeau, Gaetan, How to Design with GaN in Under an Hour, APEC 2017 Exhibitor Session, March 2017

Smith, Kurt; Barr, Ronald, Reliability Lifecycle of GaN Power Devices, white paper, March 2017

Wang, Zhan; Wu, Yifeng, 99% Efficiency True-Bridgeless Totem-Pole PFC Based on GaN HEMTs

Wang, Zhan; Honea, Jim; Wu, Yifeng, Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs, May 2015 (requires IEEE access)

Zhou, Liang; Wu, Yifeng; Honea, Jim; Wang, Zhan, High-efficiency True Bridgeless Totem Pole PFC based on GaN HEMT: Design Challenges and Cost-effective Solutions, May 2015 (requires IEEE access)

Wang, Zhan; Wu, Yifeng; Honea, Jim; Zhou, Liang, Paralleling GaN HEMTs for diode-free bridge power converters, Mar 2015

Kikkawa, T., et al, 600V JEDEC-qualified Highly-reliable GaN HEMTs on Si Substrates, Dec 2014 (requires IEEE access)

Wu, Yifeng; Guerrero, Jose; McKay, Jim; Smith, Kurt, Advances in reliability and operation space of high-voltage GaN power devices on Si substrates, Oct 2014 (requires IEEE access)

Wang, Zhan; Honea, Jim; Yuxiang Shi; Hui Li, Investigation of driver circuits for GaN HEMTs in leaded packages, Oct 2014

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, B., kV-class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800V and 100kHz, June 2014 (requires IEEE access)

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; McKay, J.; Barr, R.; Birkhahn, R., Performance and Robustness of First Generation 600V GaN-on-Si Power Transistors, Oct 2013 (requires IEEE access)

Parikh, Primit; Wu, Yifeng; Shen, Likun, Commercialization of High 600V GaN-on-Silicon Power Devices, May 2013 (requires IEEE access)

Wu, Yifeng, GaN Offers Advantages to Future HEV, March 2013

Wu, Y.; Kebort, D.; Guerrero, J.; Yea, S.; Honea, J.; Shirabe, K.; Kang, J., High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output, Oct 2012

Shirabe, Kohei; Swamy, Mahesh; Kang, Jun-Koo; Hisatsune, Masaki; Wu, Yifeng; Kebort, Don; Honea, Jim, Advantages of High-frequency PWM in AC Motor Drive Applications, Sept 2012 (requires IEEE access)

Wu, Y.; Coffie, R.; Fichtenbaum, N.; Dora, Y.; Suh, C.S.; Shen, L.; Parikh, P.; Mishra, U.K., Total GaN solution to electrical power conversion, Jun 2011 (requires IEEE access)

SPICE model for TPH3202Px/Lx (600V, 290mΩ)
SPICE model for TPH3206PxB/LxB (600V, 150mΩ)
SPICE model for TPH3208PS/Lxx (650V, 110mΩ)
SPICE model for TP65H150LSG (650V, 150mΩ)
SPICE model for TPH3212PS (650V, 72mΩ)
SPICE model for TPH3205WSB/WSBQA (650V, 49mΩ)
SPICE model for TPH3207WS (650V, 35mΩ)
SPICE model for TP65H070LxG (650V, 50mΩ)
SPICE model for TP65H050WS (650V, 50mΩ)
SPICE model for TP65H035WS (650V, 35mΩ)
SPICE model for TP90H180PS (900V, 170mΩ)
SPICE model for TP90H050WS (900V, 50mΩ)
SPICE model for TP65H035G4WS (650V, 35mΩ)
SPICE model for TP65H300G4LSG (650V, 240mΩ)
Download all

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

回頁首