Transphorm最高性能, 最可靠的GaN


650V 150mΩ GaN FET in PQFN88

The TP65H300G4LSG 650V 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TP65H300G4LSG is offered in an industry-standard 8×8 PQFN with a common source package configuration.

Key Specifications
VDS (V) min 650
VTDS (V) max 720
RDS(on) (mΩ) max* 290
Qrr (nC) typ 23
Qg (nC) typ 9
*Dynamic R(on)


Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 47nC—no free-wheeling diode required
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables more efficient topologies—easy to implement bridgeless totem-pole designs
  • Increased efficiency through fast switching
  • Increased power density
  • Reduced system size and weight
  • Lower BOM cost

AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications

Design Guides

DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files

Evaluation Kits

Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kit below features the TPH3206 GaN FET:

TDPV1000E0C1-KIT evaluation platform for 1kW inverter - Transphorm GaN FET

TDPV1000E0C1-KIT for 1kW inverter