Transphorm最高性能, 最可靠的GaN

TP65H300G4LSG

650V 150mΩ GaN FET in PQFN88

The TP65H300G4LSG 650V 240mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TP65H300G4LSG is offered in an industry-standard 8×8 PQFN with a common source package configuration.

Key Specifications
VDS (V) min 650
VTDS (V) max 720
RDS(on) (mΩ) max* 290
Qrr (nC) typ 23
Qg (nC) typ 9
*Dynamic R(on)

 

Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 47nC—no free-wheeling diode required
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables more efficient topologies—easy to implement bridgeless totem-pole designs
  • Increased efficiency through fast switching
  • Increased power density
  • Reduced system size and weight
  • Lower BOM cost
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